PART |
Description |
Maker |
STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
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SGS Thomson Microelectronics STMicroelectronics 意法半导
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STB7NB60 5411 |
From old datasheet system N - CHANNEL 600V - 1.0 OMH - 7.2A - I 2 PAK/D 2 PAK PowerMESH TM MOSFET N - CHANNEL 600V - 1.0 OMH - 7.2A - I2PAK/D2PAK PowerMESH MOSFET
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STMICROELECTRONICS[STMicroelectronics]
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STW10NB60 6241 |
N-CHANNEL Power MOSFET N - CHANNEL 600V - 0.69 - 10A - TO-247 PowerMESH TM MOSFET From old datasheet system N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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STP12NM60N STF12NM60N STB12NM60N-1 STW12NM60N STB1 |
N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET N-channel 600V - 0.35楼? - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh垄芒 Power MOSFET N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
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STMicroelectronics
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STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND ST |
N-channel 600V - 0.37ヘ - 10A - FDmesh⑩ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK N-channel 600V - 0.37Ω - 10A - FDmesh?/a> II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK N-channel 600V - 0.37Ω - 10A - FDmesh II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK N-channel 600V - 0.37楼? - 10A - FDmesh垄芒 II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
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STMicroelectronics
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IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A) CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)\u003d 1.2ohm,身份证\u003d 6.2A
|
IRF[International Rectifier] International Rectifier, Corp.
|
IRFBC30S IRFBC30L |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)
|
IRF[International Rectifier]
|
SSH10N60A |
BV(dss): 600V / R(ds): 0.8Ohm / I(d): 10A / advanced power MOSFET
|
Fairchild Semiconductor
|
IRLU120N IRLU120NPBF IRLR120N IRLR120NPBF IRLR120N |
Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.185ohm,身份证\u003d 10A条) 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package
|
International Rectifier, Corp.
|
IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
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IRF[International Rectifier]
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